 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM6923O P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE P-channel MOSFET Low on-resistance Fast switching characteristics Surface-mount package A K A A BVDSS S G -20V -3.5A 20V 1A 1.5A R DS(ON) @ 4.5V 50m S D TSSOP-8 ID Schottky Diode VKA Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Vf @ 0.5V IF D A G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID @ TA=25C ID @ TA=70C IDM IF IFM PD @ TA=25C Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current1,2 (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Linear Derating Factor (MOSFET) Total Power Dissipation (Schottky) Linear Derating Factor (Schottky) TSTG TJ Storage Temperature Range Operating Junction Temperature Range 1 -55 to 150 -55 to 125 3 Rating -20 20 12 - 3.5 - 2.8 - 30 1 25 1 Units V V V A A A A A W W/C W W/ C C C Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient (MOSFET) Max. Thermal Resistance Junction-ambient (Schottky) Max. Value 125 125 Unit C/W C/W Rev.2.02 1/29/2004 www.SiliconStandard.com 1 of 5 SSM6923O Electrical Characteristics @ T j= 25oC (unless otherwise specified) Symbol BVDSS BV DSS/ Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.03 10 15.6 2.1 5.2 8.2 9.4 66.4 48 660 285 130 Max. Units 50 85 1 25 100 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25C, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-3.5A VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS= 12V ID= -3.5A VDS= -10V VGS= -4.5V VDS= -10V ID= -1A RG= 3.3 ,VGS= -4.5V RD= 10 VGS=0V VDS=-20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V IS=-0.83A, VGS=0V Min. - Typ. - Max. Units -0.83 -1.2 A V Forward On Voltage 2 Schottky Characteristics @ Tj=25C Symbol VF Irm Parameter Forward Voltage Drop Maximum Reverse Leakage Current Test Conditions IF=1A Vr=20V Min. - Typ. - Max. Units 0.5 100 V uA Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208C/W when mounted on Min. copper pad. Rev.2.02 1/29/2004 www.SiliconStandard.com 2 of 5 SSM6923O MOSFET 32 24 T C =25 C o -4.5V -4.0V -3.5V -3.0V -ID , Drain Current (A) T C =150 o C 18 24 -ID , Drain Current (A) -4.5V -4.0V -3.5V -3.0V 16 12 -2.5V -2.5V 8 6 V GS = - 2.0V V GS =-2.0V 0 0 1 2 3 4 0 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 180 1.6 I D = -3.5A T C =25 o C 140 1.3 I D =-3.5A V GS =-4.5V Normalized RDS(ON) RDS(ON) (m ) 100 1.0 60 0.7 20 1 2 3 4 5 6 0.4 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.2 10 1 0.9 -IS (A) T j =150 o C T j =25 o C 0.1 -VGS(th) (V) 0.6 0.3 0.01 0 0.4 0.8 1.2 -50 0 50 100 150 -V SD (V) Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Rev.2.02 1/29/2004 Fig 6. Gate Threshold Voltage vs. Junction Temperature www.SiliconStandard.com 3 of 5 SSM6923O 15 10000 f=1.0MHz I D =-3.5A -VGS , Gate to Source Voltage (V) 12 1000 9 C (pF) V DS =-10V V DS =-15V V DS =-20V Ciss Coss Crss 100 6 3 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) -V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor=0.5 Normalized Thermal Response (Rthja) 10 100us 1ms 0.2 0.1 0.1 0.05 -ID (A) 1 10ms 100ms 0.02 0.01 0.01 PDM t 0.1 1s T C =25 o C Single Pulse DC Single Pulse T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208 oC/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Rev.2.02 1/29/2004 www.SiliconStandard.com 4 of 5 SSM6923O SCHOTTKY DIODE 10000 10 Irm- Reverse Leakage Current (uA) I F - Forward Current (A) 1000 T j = 1 25 o C 1 V KA = 20V V KA =10V T j = 25oC 100 0.1 10 0.01 1 25 50 75 100 125 0 0.2 0.4 0.6 0.8 Junction Temperature (C) V F - Forward Voltage Drop (V) Fig 1. Reverse Leakage Current vs. Junction Temperature Fig 2. Forward Voltage Drop Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.02 1/29/2004 www.SiliconStandard.com 5 of 5 |
Price & Availability of SSM6923O
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |